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| NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high-speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line-operated switch-mode appliations. Applications: D Switching Regulators D PWM Inverters and Motor Controls D Deflection Circuits D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Device Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperatur Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Maximum Lead temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Charactetristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100C IC = 15A, Vclamp = 300V, TC = +100C Collector Cutoff Current ICEV VCEV = 850V, VBE(off) = 1.5V VCEV = 850V, VBE(off) = 1.5V, TC = +100C ICER Emitter Cutoff Current Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VCE = 2V, IC = 5A VCE = 2V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A, TC = +100C IC = 15A, IB = 3A Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time Storage Time Fall Time Storage Time Fall Time fT Cob td tr ts tf tsv tfi tsv tfi IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V, TJ = +100C VCE = 10V, IC = 500mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz VCC = 250V, IC = 10A, IB1 = IB2 =2A, tp = 300s, Duty Cycle 2% 6 125 - - - - - 0.09 - - - - - - - - 2.0 - - - 28 500 0.05 1.0 4.0 0.7 - - 5.0 1.5 MHz pF s s s s s s s s VBE(sat) IC = 10A, IB = 2A IC = 10A, IB = 2A, TC = +100C 12 6 - - - - - - - - - - - - 60 30 1.5 2.5 5.0 1.6 1.6 V V V V V IS/b VCE = 100V, t = 1.0s (non-repetitive) 0.2 - - A IEBO VCE = 850V, RBE = 50, TC = +100C VEB = 9V, IC = 0 400 450 300 - - - - - - - - - - - - - - 1.0 4.0 5.0 1.0 V V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Resistive Load) Switching Characteristics (Inductive Load, Clamped) Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE53
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